All MOSFET. AO4892 Datasheet

 

AO4892 Datasheet and Replacement


   Type Designator: AO4892
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: SO-8
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AO4892 Datasheet (PDF)

 ..1. Size:344K  aosemi
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AO4892

AO4892100V Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AO4892 uses trench MOSFET technology that is 100Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 4Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 ..2. Size:1280K  kexin
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AO4892

SMD Type MOSFETDual N-Channel MOSFETAO4892 (KO4892)SOP-8 Unit:mm Features VDS (V) = 100V ID = 4A (VGS = 10V) 1.50 0.15 RDS(ON) 68m (VGS = 10V) RDS(ON) 94m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 100V Gate-S

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History: HUF76143S3S | HLML6401 | AM4435 | HRLP33N03K | HM4110 | XP162A11C0PR-G | AP85T03GH-HF

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