AO4948
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4948
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 8.8(8)
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10.4
nC
trⓘ - Rise Time: 3.8(3.5)
nS
Cossⓘ -
Output Capacitance: 308(110)
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016(0.019)
Ohm
Package:
SO-8
AO4948
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4948
Datasheet (PDF)
..1. Size:447K aosemi
ao4948.pdf
AO494830V Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4948 uses advanced trench technology to provide FET1(N-Channel) FET2(N-Channel)excellent RDS(ON) and low gate charge. The two MOSFETsVDS= 30V 30Vmake a compact and efficient switch and synchronous ID= 8.8A (VGS=10V) 8A (VGS=10V)rectifier combination for use in DC-DC converters. A RDS(ON) RDS(O
..2. Size:4066K kexin
ao4948.pdf
SMD Type MOSFETDual N-Channel MOSFETAO4948 (KO4948)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V1.50 0.15 ID = 8.8 A (VGS = 10V) RDS(ON) 16m (VGS = 10V)1 S1 5 D2 RDS(ON) 22m (VGS = 4.5V)6 D22 G17 D1SRFETTM Soft Recovery MOSFET:Integrated Schottky Diode 3 S28 D14 G2N-Channel 2 VDS (V) = 30V ID = 8 A (VGS = 10V
9.1. Size:339K aosemi
ao4940.pdf
AO4940Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4940 uses advanced trench technology to provide FET1 FET2excellent RDS(ON) and low gate charge. The two MOSFETs VDS (V) = 30V VDS(V) = 30Vmake a compact and efficient switch and synchronous ID = 9.1A ID=7.8A (VGS = 10V)rectifier combination for use in DC-DC converters. A RDS(ON)
9.2. Size:2415K kexin
ao4940.pdf
SMD Type MOSFETDual N-Channel MOSFETAO4940 (KO4940)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V ID = 9.1 A (VGS = 10V)1.50 0.15 RDS(ON) 15m (VGS = 10V) RDS(ON) 23m (VGS = 4.5V)1 D2 5 S2/D1 6 S2/D12 D2SRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 S2/D13 G18 G2N-Channel 2 4 S1 VDS (V) = 30V ID = 7.8 A
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