AO5404E MOSFET Datasheet: N-Ch, 20V, 0.5A. Full specification with pinout and replacement list

AO5404E Specs and Replacement

Type Designator: AO5404E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.3 nS

Cossⓘ - Output Capacitance: 8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: SC89-3

AO5404E substitution

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AO5404E datasheet

..1. Size:189K aosemi
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AO5404E N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5404E/L uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 0.5 A (VGS = 4.5V) operation with gate voltages as low as 1.8V. This RDS(ON) ... See More ⇒

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AO5404E www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) c Qg (TYP.) 100 % Rg tested 0.270 at VGS = 4.5 V 0.75 20 1.4 nC 0.390 at VGS = 2.5 V 0.70 APPLICATIONS Smart phones, tablet PC s - DC/DC converters - Boost converters - Load switch, OVP switch SC-75 D G 1 G 3 D S 2 Top View S... See More ⇒

0.1. Size:392K cn tech public
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WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW www.techpublic.com.tw ... See More ⇒

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ao5401e.pdf pdf_icon

AO5401E P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5401E/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -0.5 A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This RDS(ON) ... See More ⇒