AO5404E - параметры транзистора MOSFET, его аналоги, datasheet

AO5404E Datasheet (PDF)

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AO5404EN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5404E/L uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 0.5 A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)

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AO5404Ewww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) c Qg (TYP.) 100 % Rg tested0.270 at VGS = 4.5 V0.7520 1.4 nC0.390 at VGS = 2.5 V0.70APPLICATIONS Smart phones, tablet PCs- DC/DC converters- Boost converters- Load switch, OVP switchSC-75 DG1G3 DS 2Top ViewS

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AO5401EP-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5401E/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -0.5 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)