AO5404E - аналоги, параметры транзистора - Справочник транзисторов

AO5404E даташит

..1. Size:189K aosemi
ao5404e.pdf pdf_icon

AO5404E N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5404E/L uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 0.5 A (VGS = 4.5V) operation with gate voltages as low as 1.8V. This RDS(ON)

..2. Size:1735K cn vbsemi
ao5404e.pdf pdf_icon

AO5404E www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) c Qg (TYP.) 100 % Rg tested 0.270 at VGS = 4.5 V 0.75 20 1.4 nC 0.390 at VGS = 2.5 V 0.70 APPLICATIONS Smart phones, tablet PC s - DC/DC converters - Boost converters - Load switch, OVP switch SC-75 D G 1 G 3 D S 2 Top View S

0.1. Size:392K cn tech public
tpao5404el.pdf pdf_icon

WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW www.techpublic.com.tw

9.1. Size:153K aosemi
ao5401e.pdf pdf_icon

AO5401E P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5401E/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and ID = -0.5 A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This RDS(ON)