AO5600E Datasheet and Replacement
Type Designator: AO5600E
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.6(0.5) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.3(150) nS
Cossⓘ - Output Capacitance: 8(17) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65(0.8) Ohm
Package: SC89-6
AO5600E substitution
AO5600E Datasheet (PDF)
ao5600e.pdf

AO5600EComplementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5600E/L uses advanced trench technology n-channelMOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 20V, ID = 0.6A (VGS=4.5V)charge. The complementary MOSFETs may be usedRDS(ON)
Datasheet: AO4924 , AO4932 , AO4938 , AO4940 , AO4948 , AO4952 , AO5401E , AO5404E , K3569 , AO5800E , AO5803E , AO5804E , AO6400 , AO6401 , AO6401A , AO6402 , AO6402A .
History: ME4825-G | 2SK1928 | IXTJ3N150 | VBZE04N03 | SSM3K56CT | AM90N06-04M2B | AUIRFP4227
Keywords - AO5600E MOSFET datasheet
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History: ME4825-G | 2SK1928 | IXTJ3N150 | VBZE04N03 | SSM3K56CT | AM90N06-04M2B | AUIRFP4227



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