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AO5600E Specs and Replacement

Type Designator: AO5600E

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.6(0.5) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.3(150) nS

Cossⓘ - Output Capacitance: 8(17) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65(0.8) Ohm

Package: SC89-6

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AO5600E datasheet

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AO5600E

AO5600E Complementary Enhancement Mode Field Effect Transistor General Description Features The AO5600E/L uses advanced trench technology n-channel MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 20V, ID = 0.6A (VGS=4.5V) charge. The complementary MOSFETs may be used RDS(ON)... See More ⇒

Detailed specifications: AO4924, AO4932, AO4938, AO4940, AO4948, AO4952, AO5401E, AO5404E, IRF9540, AO5800E, AO5803E, AO5804E, AO6400, AO6401, AO6401A, AO6402, AO6402A

Keywords - AO5600E MOSFET specs

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