All MOSFET. AO5600E Datasheet

 

AO5600E Datasheet and Replacement


   Type Designator: AO5600E
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.6(0.5) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.3(150) nS
   Cossⓘ - Output Capacitance: 8(17) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65(0.8) Ohm
   Package: SC89-6
 

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AO5600E Datasheet (PDF)

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AO5600E

AO5600EComplementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5600E/L uses advanced trench technology n-channelMOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 20V, ID = 0.6A (VGS=4.5V)charge. The complementary MOSFETs may be usedRDS(ON)

Datasheet: AO4924 , AO4932 , AO4938 , AO4940 , AO4948 , AO4952 , AO5401E , AO5404E , K3569 , AO5800E , AO5803E , AO5804E , AO6400 , AO6401 , AO6401A , AO6402 , AO6402A .

History: P6002OAG

Keywords - AO5600E MOSFET datasheet

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