FSS430D Datasheet. Specs and Replacement
Type Designator: FSS430D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: TO257AA
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FSS430D substitution
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FSS430D datasheet
fss430.pdf
FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, June 1998 SEGR Resistant, N-Channel Power MOSFETs Features Description 3A, 500V, rDS(ON) = 2.70 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) ... See More ⇒
Detailed specifications: FSS230D, FSS230R, FSS234D, FSS234R, FSS23A4D, FSS23A4R, FSS23AOD, FSS23AOR, STP80NF70, FSS430R, FSS9130D, FSS9130R, FSS913AOD, FSS913AOR, FSS9230D, FSS9230R, FSS923AOD
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