FSS430D PDF Specs and Replacement
Type Designator: FSS430D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: TO257AA
FSS430D substitution
FSS430D PDF Specs
fss430.pdf
FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, June 1998 SEGR Resistant, N-Channel Power MOSFETs Features Description 3A, 500V, rDS(ON) = 2.70 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) ... See More ⇒
Detailed specifications: FSS230D , FSS230R , FSS234D , FSS234R , FSS23A4D , FSS23A4R , FSS23AOD , FSS23AOR , STP80NF70 , FSS430R , FSS9130D , FSS9130R , FSS913AOD , FSS913AOR , FSS9230D , FSS9230R , FSS923AOD .
History: FSYA250R
Keywords - FSS430D MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: FSYA250R
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