All MOSFET. AO7600 Datasheet

 

AO7600 Datasheet and Replacement


   Type Designator: AO7600
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.9(0.6) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4(6.5) nS
   Cossⓘ - Output Capacitance: 17 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3(0.55) Ohm
   Package: SC70-6
 

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AO7600 Datasheet (PDF)

 ..1. Size:140K  aosemi
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AO7600

AO7600Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO7600/L uses advanced trench n-channel p-channeltechnology MOSFETs to provide excellent VDS (V) = 20V -20VRDS(ON) and low gate charge. The ID = 0.9A (VGS=4.5V) -0.6A (VGS=-4.5V) complementary MOSFETs may be used to form a level shifted high side switch, an RDS(ON) RDS(ON) inverter, a

 ..2. Size:1744K  cn vbsemi
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AO7600

AO7600www.VBsemi.twN- and P- Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package0.130 at VGS = 1.8 V 1.50 Fast Switching0.155 at VGS = - 4.5 V - 2.

Datasheet: AO7408 , AO7410 , AO7411 , AO7412 , AO7413 , AO7414 , AO7415 , AO7417 , IRF830 , AO7800 , AO7801 , AO8801 , AO8801A , AO8804 , AO8807 , AO8808A , AO8810 .

History: HY1904U | OSG65R200FSF-NB | RQ5E030AJ | CS12N65A8R | RSR025P03TL | STP10NK70Z | HAT1025R

Keywords - AO7600 MOSFET datasheet

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