All MOSFET. AO7600 Datasheet

 

AO7600 Datasheet and Replacement


   Type Designator: AO7600
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.9(0.6) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4(6.5) nS
   Cossⓘ - Output Capacitance: 17 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3(0.55) Ohm
   Package: SC70-6
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AO7600 Datasheet (PDF)

 ..1. Size:140K  aosemi
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AO7600

AO7600Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO7600/L uses advanced trench n-channel p-channeltechnology MOSFETs to provide excellent VDS (V) = 20V -20VRDS(ON) and low gate charge. The ID = 0.9A (VGS=4.5V) -0.6A (VGS=-4.5V) complementary MOSFETs may be used to form a level shifted high side switch, an RDS(ON) RDS(ON) inverter, a

 ..2. Size:1744K  cn vbsemi
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AO7600

AO7600www.VBsemi.twN- and P- Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs: 1.8 V RatedN-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package0.130 at VGS = 1.8 V 1.50 Fast Switching0.155 at VGS = - 4.5 V - 2.

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History: IRFE210 | NVMFS5C406NL | SSS10N60A | IPW60R080P7 | IRL3303S | IRF3000PBF | SI5402BDC

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