AO7600 MOSFET Datasheet: NP-Ch, 20V, 0.9(0.6)A. Full specification with pinout and replacement list

AO7600 Specs and Replacement

Type Designator: AO7600

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.9(0.6) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4(6.5) nS

Cossⓘ - Output Capacitance: 17 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3(0.55) Ohm

Package: SC70-6

AO7600 substitution

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AO7600 datasheet

..1. Size:140K aosemi
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AO7600 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO7600/L uses advanced trench n-channel p-channel technology MOSFETs to provide excellent VDS (V) = 20V -20V RDS(ON) and low gate charge. The ID = 0.9A (VGS=4.5V) -0.6A (VGS=-4.5V) complementary MOSFETs may be used to form a level shifted high side switch, an RDS(ON) RDS(ON) inverter, a... See More ⇒

..2. Size:1744K cn vbsemi
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AO7600 www.VBsemi.tw N- and P- Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.090 at VGS = 4.5 V 3.28 TrenchFET Power MOSFETs 1.8 V Rated N-Channel 20 0.110 at VGS = 2.5 V 2.13 Thermally Enhanced SC-70 Package 0.130 at VGS = 1.8 V 1.50 Fast Switching 0.155 at VGS = - 4.5 V - 2.... See More ⇒

Detailed specifications: AO7408, AO7410, AO7411, AO7412, AO7413, AO7414, AO7415, AO7417, 2N60, AO7800, AO7801, AO8801, AO8801A, AO8804, AO8807, AO8808A, AO8810