AO8820 Datasheet and Replacement
Type Designator: AO8820
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1500 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TSSOP-8
AO8820 substitution
AO8820 Datasheet (PDF)
ao8820.pdf

AO882020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO8820 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 7Avoltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V)
ao8822.pdf

AO882220V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO8822 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 7Avoltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V)
Datasheet: AO8801 , AO8801A , AO8804 , AO8807 , AO8808A , AO8810 , AO8814 , AO8818 , P0903BDG , AO8822 , AO8830 , AO9926B , AO9926C , AOB10N60 , AOB10T60P , AOB1100L , AOB11C60 .
History: SML1001R1AN | FQB34P10TMF085 | AOTL160A60 | AP6680CGYT-HF | SM2501NSU | 2N7637-GA | FDMS7676
Keywords - AO8820 MOSFET datasheet
AO8820 cross reference
AO8820 equivalent finder
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History: SML1001R1AN | FQB34P10TMF085 | AOTL160A60 | AP6680CGYT-HF | SM2501NSU | 2N7637-GA | FDMS7676



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