All MOSFET. AO8820 Datasheet

 

AO8820 Datasheet and Replacement


   Type Designator: AO8820
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1500 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TSSOP-8
 

 AO8820 substitution

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AO8820 Datasheet (PDF)

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AO8820

AO882020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO8820 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 7Avoltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V)

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AO8820

AO882220V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO8822 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 7Avoltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V)

Datasheet: AO8801 , AO8801A , AO8804 , AO8807 , AO8808A , AO8810 , AO8814 , AO8818 , IRF1405 , AO8822 , AO8830 , AO9926B , AO9926C , AOB10N60 , AOB10T60P , AOB1100L , AOB11C60 .

History: 2N6792 | STP80N6F6 | QJD1210006 | AP83T02GJ-HF | IPD033N06N | HGS130N12SL | BSC042N03MS

Keywords - AO8820 MOSFET datasheet

 AO8820 cross reference
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