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AO8820 Specs and Replacement

Type Designator: AO8820

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1500 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TSSOP-8

AO8820 substitution

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AO8820 datasheet

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AO8820

AO8820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V The AO8820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 7A voltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V) ... See More ⇒

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ao8822.pdf pdf_icon

AO8820

AO8822 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V The AO8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 7A voltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AO8801, AO8801A, AO8804, AO8807, AO8808A, AO8810, AO8814, AO8818, IRF830, AO8822, AO8830, AO9926B, AO9926C, AOB10N60, AOB10T60P, AOB1100L, AOB11C60

Keywords - AO8820 MOSFET specs

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