All MOSFET. AO8830 Datasheet

 

AO8830 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AO8830
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.2 nC
   trⓘ - Rise Time: 972 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TSSOP-8

 AO8830 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO8830 Datasheet (PDF)

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 ao8830.pdf

AO8830 AO8830

AO8830Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8830/L uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 6 A (VGS = 10V)operation with gate voltages as low as 1.8V while RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK2133 | BLF6G10-45

 

 
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