AO8830 Datasheet and Replacement
Type Designator: AO8830
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 972 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TSSOP-8
AO8830 substitution
AO8830 Datasheet (PDF)
ao8830.pdf
AO8830Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8830/L uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 6 A (VGS = 10V)operation with gate voltages as low as 1.8V while RDS(ON)
Datasheet: AO8804 , AO8807 , AO8808A , AO8810 , AO8814 , AO8818 , AO8820 , AO8822 , AON7403 , AO9926B , AO9926C , AOB10N60 , AOB10T60P , AOB1100L , AOB11C60 , AOB11N60 , AOB11S60 .
History: TK13A60D | NCEP85T25 | SML100B13F | HAT2217C | MCG40N03 | HGM110N08AL | UF840KL-TN3-R
Keywords - AO8830 MOSFET datasheet
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History: TK13A60D | NCEP85T25 | SML100B13F | HAT2217C | MCG40N03 | HGM110N08AL | UF840KL-TN3-R
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