All MOSFET. AO8830 Datasheet

 

AO8830 Datasheet and Replacement


   Type Designator: AO8830
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 972 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TSSOP-8
 

 AO8830 substitution

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AO8830 Datasheet (PDF)

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AO8830

AO8830Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8830/L uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 6 A (VGS = 10V)operation with gate voltages as low as 1.8V while RDS(ON)

Datasheet: AO8804 , AO8807 , AO8808A , AO8810 , AO8814 , AO8818 , AO8820 , AO8822 , IRF9640 , AO9926B , AO9926C , AOB10N60 , AOB10T60P , AOB1100L , AOB11C60 , AOB11N60 , AOB11S60 .

History: NTMFS4C027N | AOL1404

Keywords - AO8830 MOSFET datasheet

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