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AO8830 Specs and Replacement

Type Designator: AO8830

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 972 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TSSOP-8

AO8830 substitution

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AO8830 datasheet

 ..1. Size:195K  aosemi
 ao8830.pdf pdf_icon

AO8830

AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8830/L uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 6 A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON) ... See More ⇒

Detailed specifications: AO8804, AO8807, AO8808A, AO8810, AO8814, AO8818, AO8820, AO8822, IRF9640, AO9926B, AO9926C, AOB10N60, AOB10T60P, AOB1100L, AOB11C60, AOB11N60, AOB11S60

Keywords - AO8830 MOSFET specs

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