AO9926C Datasheet and Replacement
Type Designator: AO9926C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: SO-8
AO9926C substitution
AO9926C Datasheet (PDF)
ao9926c.pdf
AO9926C20V Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AO9926C uses advanced trench technology to 20V7.6Aprovide excellent RDS(ON), low gate charge and operation ID (at VGS=10V)with gate voltages as low as 1.8V while retaining a 12V
ao9926b.pdf
AO9926B20V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO9926B uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=10V) 7.6Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS=10V)
Datasheet: AO8808A , AO8810 , AO8814 , AO8818 , AO8820 , AO8822 , AO8830 , AO9926B , AON7403 , AOB10N60 , AOB10T60P , AOB1100L , AOB11C60 , AOB11N60 , AOB11S60 , AOB11S65 , AOB12N50 .
History: NTMFS4C028N | IPB020NE7N3G
Keywords - AO9926C MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: NTMFS4C028N | IPB020NE7N3G
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