AO9926C Specs and Replacement
Type Designator: AO9926C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: SO-8
AO9926C substitution
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AO9926C datasheet
ao9926c.pdf
AO9926C 20V Dual N-Channel MOSFET General Description Product Summary VDS The AO9926C uses advanced trench technology to 20V 7.6A provide excellent RDS(ON), low gate charge and operation ID (at VGS=10V) with gate voltages as low as 1.8V while retaining a 12V ... See More ⇒
ao9926b.pdf
AO9926B 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AO9926B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=10V) 7.6A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AO8808A, AO8810, AO8814, AO8818, AO8820, AO8822, AO8830, AO9926B, AON7403, AOB10N60, AOB10T60P, AOB1100L, AOB11C60, AOB11N60, AOB11S60, AOB11S65, AOB12N50
Keywords - AO9926C MOSFET specs
AO9926C cross reference
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