All MOSFET. AO9926C Datasheet

 

AO9926C Datasheet and Replacement


   Type Designator: AO9926C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SO-8
 

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AO9926C Datasheet (PDF)

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AO9926C

AO9926C20V Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AO9926C uses advanced trench technology to 20V7.6Aprovide excellent RDS(ON), low gate charge and operation ID (at VGS=10V)with gate voltages as low as 1.8V while retaining a 12V

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AO9926C

AO9926B20V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO9926B uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=10V) 7.6Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS=10V)

Datasheet: AO8808A , AO8810 , AO8814 , AO8818 , AO8820 , AO8822 , AO8830 , AO9926B , EMB04N03H , AOB10N60 , AOB10T60P , AOB1100L , AOB11C60 , AOB11N60 , AOB11S60 , AOB11S65 , AOB12N50 .

History: AFN9972S | SVS7N60DD2TR | STF16N50M2 | P3606BEA | PSMN5R4-25YLD | AFN6424S | UPA1913

Keywords - AO9926C MOSFET datasheet

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