FSS9230D
MOSFET. Datasheet pdf. Equivalent
Type Designator: FSS9230D
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6
Ohm
Package:
TO257AA
FSS9230D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FSS9230D
Datasheet (PDF)
7.1. Size:44K intersil
fss9230.pdf 
FSS9230D,FSS9230R4A, -200V, 1.60 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 4A, -200V, rDS(ON) = 1.60 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD
8.1. Size:45K harris semi
fss923ao.pdf
FSS923AOD,S E M I C O N D U C T O RFSS923AORRadiation Hardened, SEGR ResistantFebruary 1998 P-Channel Power MOSFETsFeatures Description 7A, -200V, rDS(ON) = 0.650 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military spaceapplications. Enhanced Power MOS
Datasheet: FSS23AOD
, FSS23AOR
, FSS430D
, FSS430R
, FSS9130D
, FSS9130R
, FSS913AOD
, FSS913AOR
, IRFZ46N
, FSS9230R
, FSS923AOD
, FSS923AOR
, FSYA250D
, FSYA250R
, GFB50N03
, GFB70N03
, GFD30N03
.
