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FSS9230D Specs and Replacement


   Type Designator: FSS9230D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO257AA
 

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FSS9230D Specs

 7.1. Size:44K  intersil
 fss9230.pdf pdf_icon

FSS9230D

FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description 4A, -200V, rDS(ON) = 1.60 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD ... See More ⇒

 8.1. Size:45K  harris semi
 fss923ao.pdf pdf_icon

FSS9230D

FSS923AOD, S E M I C O N D U C T O R FSS923AOR Radiation Hardened, SEGR Resistant February 1998 P-Channel Power MOSFETs Features Description 7A, -200V, rDS(ON) = 0.650 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs Total Dose specifically designed for commercial and military space applications. Enhanced Power MOS... See More ⇒

Detailed specifications: FSS23AOD , FSS23AOR , FSS430D , FSS430R , FSS9130D , FSS9130R , FSS913AOD , FSS913AOR , IRFP250 , FSS9230R , FSS923AOD , FSS923AOR , FSYA250D , FSYA250R , GFB50N03 , GFB70N03 , GFD30N03 .

Keywords - FSS9230D MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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