All MOSFET. AOB409L Datasheet

 

AOB409L Datasheet and Replacement


   Type Designator: AOB409L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 31.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14.5 nS
   Cossⓘ - Output Capacitance: 178 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO-263
 

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AOB409L Datasheet (PDF)

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AOB409L

AOB409L60V P-Channel MOSFETGeneral Description Product SummaryVDS-60VThe AOB409L combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -31.5Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=-10V)

 ..2. Size:237K  inchange semiconductor
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AOB409L

isc P-Channel MOSFET Transistor AOB409LFEATURESDrain Current I = -31.5A@ T =25D CDrain Source Voltage-: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R = 38m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andge

Datasheet: AOB288L , AOB290L , AOB2910L , AOB2918L , AOB292L , AOB296L , AOB298L , AOB29S50 , IRLB4132 , AOB410L , AOB411L , AOB412L , AOB414 , AOB416 , AOB4184 , AOB418L , AOB42S60 .

History: IRFBC40 | WMT07N10TS

Keywords - AOB409L MOSFET datasheet

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