All MOSFET. AOB409L Datasheet


AOB409L MOSFET. Datasheet pdf. Equivalent

Type Designator: AOB409L

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 83.3 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V

Maximum Drain Current |Id|: 31.5 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 14.5 nS

Drain-Source Capacitance (Cd): 178 pF

Maximum Drain-Source On-State Resistance (Rds): 0.038 Ohm

Package: TO-263

AOB409L Transistor Equivalent Substitute - MOSFET Cross-Reference Search


AOB409L Datasheet (PDF)

1.1. aob409l.pdf Size:250K _aosemi


AOB409L 60V P-Channel MOSFET General Description Product Summary VDS -60V The AOB409L combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -31.5A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=-10V) < 38mΩ converters and synchronous rectifiers for consumer, RDS(ON) (at VGS =-4.5V) < 50mΩ telecom, industrial

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