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GFB50N03 Spec and Replacement


   Type Designator: GFB50N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO263

 GFB50N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GFB50N03 Specs

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Detailed specifications: FSS913AOD , FSS913AOR , FSS9230D , FSS9230R , FSS923AOD , FSS923AOR , FSYA250D , FSYA250R , SI2302 , GFB70N03 , GFD30N03 , GFP50N03 , GFP70N03 , H5N2001LD , H5N2001LS , H5N2503P , H5N5004PL .

History: DJD420N70T | SML80T27

Keywords - GFB50N03 MOSFET specs

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