All MOSFET. AOC4810 Datasheet

 

AOC4810 Datasheet and Replacement


   Type Designator: AOC4810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: ALPHADFN3.2X2-8-TEP1
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AOC4810 Datasheet (PDF)

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AOC4810

AOC481030V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVss 30VThe AOC4810 uses advanced trench technology to provide IS (at VGS=10V) 8Aexcellent RSS(ON), low gate charge and operation with gatevoltages as low as 4.5V while retaining a 20V VGS(MAX) rating. It RSS(ON) (at VGS=10V)

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History: VBNC1303 | IRFS4010PBF

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