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AOC4810 Specs and Replacement

Type Designator: AOC4810

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: ALPHADFN3.2X2-8-TEP1

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AOC4810 datasheet

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 aoc4810.pdf pdf_icon

AOC4810

AOC4810 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary Vss 30V The AOC4810 uses advanced trench technology to provide IS (at VGS=10V) 8A excellent RSS(ON), low gate charge and operation with gate voltages as low as 4.5V while retaining a 20V VGS(MAX) rating. It RSS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOC2417, AOC2421, AOC2422, AOC2423, AOC2800, AOC2802, AOC2804, AOC2806, 20N50, AOD11S60, AOD1N60, AOD200, AOD208, AOD210, AOD2210, AOD240, AOD242

Keywords - AOC4810 MOSFET specs

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