AOD2210
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD2210
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 34
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 74
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105
Ohm
Package:
TO-252
AOD2210
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOD2210
Datasheet (PDF)
..1. Size:358K aosemi
aod2210.pdf 
AOD2210/AOI2210200V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 200V Low RDS(ON) ID (at VGS=10V) 18A Low Gate Charge RDS(ON) (at VGS=10V)
..2. Size:845K cn vbsemi
aod2210.pdf
AOD2210www.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
..3. Size:265K inchange semiconductor
aod2210.pdf
isc N-Channel MOSFET Transistor AOD2210FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
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