All MOSFET. AOD2210 Datasheet

 

AOD2210 Datasheet and Replacement


   Type Designator: AOD2210
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 74 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TO-252
 

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AOD2210 Datasheet (PDF)

 ..1. Size:358K  aosemi
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AOD2210

AOD2210/AOI2210200V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 200V Low RDS(ON) ID (at VGS=10V) 18A Low Gate Charge RDS(ON) (at VGS=10V)

 ..2. Size:845K  cn vbsemi
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AOD2210

AOD2210www.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

 ..3. Size:265K  inchange semiconductor
 aod2210.pdf pdf_icon

AOD2210

isc N-Channel MOSFET Transistor AOD2210FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Datasheet: AOC2804 , AOC2806 , AOC4810 , AOD11S60 , AOD1N60 , AOD200 , AOD208 , AOD210 , K2611 , AOD240 , AOD242 , AOD254 , AOD2544 , AOD256 , AOD2606 , AOD2610 , AOD2810 .

History: BL10N80-A | SWB13N65K2

Keywords - AOD2210 MOSFET datasheet

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