All MOSFET. AOD4T60 Datasheet

 

AOD4T60 Datasheet and Replacement


   Type Designator: AOD4T60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: TO-252
 

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AOD4T60 Datasheet (PDF)

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AOD4T60

AOD4T60/AOI4T60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700VThe AOD4T60 & AOI4T60 are fabricated using anadvanced high voltage MOSFET process that is designed IDM 16Ato deliver high levels of performance and robustness in RDS(ON),max

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AOD4T60

AOD4T60P/AOI4T60P600V,4A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 16A Low Ciss and Crss RDS(ON),max

Datasheet: AOD484 , AOD486A , AOD492 , AOD496 , AOD496A , AOD498 , AOD4N60 , AOD4S60 , IRLB4132 , AOD4T60P , AOD502 , AOD504 , AOD508 , AOD510 , AOD514 , AOD516 , AOD526 .

History: SWP072R06ET | AUIRFIZ44N | SM140R50CT1TL | BLP04N10-P | DHB16N06 | APT24M80B | AP60SL650AFI

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