AOD4T60P Specs and Replacement
Type Designator: AOD4T60P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 22 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: TO-252
AOD4T60P substitution
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AOD4T60P datasheet
aod4t60p.pdf
AOD4T60P/AOI4T60P 600V,4A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 16A Low Ciss and Crss RDS(ON),max ... See More ⇒
aod4t60.pdf
AOD4T60/AOI4T60 600V,4A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V The AOD4T60 & AOI4T60 are fabricated using an advanced high voltage MOSFET process that is designed IDM 16A to deliver high levels of performance and robustness in RDS(ON),max ... See More ⇒
Detailed specifications: AOD486A, AOD492, AOD496, AOD496A, AOD498, AOD4N60, AOD4S60, AOD4T60, NCEP15T14, AOD502, AOD504, AOD508, AOD510, AOD514, AOD516, AOD526, AOD528
Keywords - AOD4T60P MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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