All MOSFET. AOD6N50 Datasheet

 

AOD6N50 Datasheet and Replacement


   Type Designator: AOD6N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-252
 

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AOD6N50 Datasheet (PDF)

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AOD6N50

AOD6N50500V,5.3A N-Channel MOSFETGeneral Description Product SummaryThe AOD6N50 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high VDS 600V@150levels of performance and robustness in popular AC-DC ID (at VGS=10V) 5.3Aapplications.By providing low RDS(on), Ciss and Crss along RDS(ON) (at VGS=10V)

Datasheet: AOD536 , AOD538 , AOD5N40 , AOD5N50 , AOD5T40P , AOD603A , AOD607 , AOD609 , 2N60 , AOD7N60 , AOD7N65 , AOD7S60 , AOD7S65 , AOD8N25 , AOD9N40 , AOD9N50 , AOD9N52 .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - AOD6N50 MOSFET datasheet

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