AOD6N50 Specs and Replacement
Type Designator: AOD6N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 58 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-252
AOD6N50 substitution
- MOSFET ⓘ Cross-Reference Search
AOD6N50 datasheet
aod6n50.pdf
AOD6N50 500V,5.3A N-Channel MOSFET General Description Product Summary The AOD6N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high VDS 600V@150 levels of performance and robustness in popular AC-DC ID (at VGS=10V) 5.3A applications.By providing low RDS(on), Ciss and Crss along RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOD536, AOD538, AOD5N40, AOD5N50, AOD5T40P, AOD603A, AOD607, AOD609, 20N50, AOD7N60, AOD7N65, AOD7S60, AOD7S65, AOD8N25, AOD9N40, AOD9N50, AOD9N52
Keywords - AOD6N50 MOSFET specs
AOD6N50 cross reference
AOD6N50 equivalent finder
AOD6N50 pdf lookup
AOD6N50 substitution
AOD6N50 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: MDQ16N50GTP | AOB296L | TK30A06N1
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
transistor 2222a | 8050 transistor | bc238 | 2sb772 | 2n2222a-1726 datasheet | bc516 | 2n3391 equivalent | a562 transistor