All MOSFET. AOH3110 Datasheet

 

AOH3110 Datasheet and Replacement


   Type Designator: AOH3110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: SOT223
 

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AOH3110 Datasheet (PDF)

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AOH3110

AOH3110100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOH3110 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 1.0Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

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AOH3110

AOH3106100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOH3106 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 2Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

Datasheet: AOD7S60 , AOD7S65 , AOD8N25 , AOD9N40 , AOD9N50 , AOD9N52 , AOD9T40P , AOH3106 , IRFZ48N , AOI11S60 , AOI1N60 , AOI208 , AOI2210 , AOI2N60 , AOI2N60A , AOI403 , AOI409 .

History: TPCC8074 | SRC60R420 | 2SJ505L | VS4802GMM | IPU50R3K0CE | BUK9K25-40E | STF8209

Keywords - AOH3110 MOSFET datasheet

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