AOH3110 Specs and Replacement
Type Designator: AOH3110
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: SOT223
AOH3110 substitution
- MOSFET ⓘ Cross-Reference Search
AOH3110 datasheet
aoh3110.pdf
AOH3110 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOH3110 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 1.0A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V) ... See More ⇒
aoh3106.pdf
AOH3106 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOH3106 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 2A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOD7S60, AOD7S65, AOD8N25, AOD9N40, AOD9N50, AOD9N52, AOD9T40P, AOH3106, STP65NF06, AOI11S60, AOI1N60, AOI208, AOI2210, AOI2N60, AOI2N60A, AOI403, AOI409
Keywords - AOH3110 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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