AOI208 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOI208
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 54 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 720 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
Package: TO-251A
AOI208 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOI208 Datasheet (PDF)
aoi208.pdf
AOD208/AOI20830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOD208/AOI208 uses Trench MOSFET technologythat is uniquely optimized to provide the most efficient high ID (at VGS=10V) 54Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)
aoi208.pdf
isc N-Channel MOSFET Transistor AOI208FEATURESDrain Current I =54A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IPW65R280C6 | SWB068R68E7T | SWD085R68E7T
History: IPW65R280C6 | SWB068R68E7T | SWD085R68E7T
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918