All MOSFET. AOI208 Datasheet

 

AOI208 Datasheet and Replacement


   Type Designator: AOI208
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 54 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
   Package: TO-251A
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AOI208 Datasheet (PDF)

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AOI208

AOD208/AOI20830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOD208/AOI208 uses Trench MOSFET technologythat is uniquely optimized to provide the most efficient high ID (at VGS=10V) 54Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)

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AOI208

isc N-Channel MOSFET Transistor AOI208FEATURESDrain Current I =54A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: DM12N65C | FCPF7N60YDTU | AP6679GI-HF | SM6A12NSFP | SPD04N60S5 | NTD4855N-1G

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