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AOI208 Specs and Replacement

Type Designator: AOI208

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 54 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm

Package: TO-251A

AOI208 substitution

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AOI208 datasheet

 ..1. Size:337K  aosemi
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AOI208

AOD208/AOI208 30V N-Channel MOSFET General Description Product Summary VDS 30V The AOD208/AOI208 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 54A frequency switching performance. Power losses are RDS(ON) (at VGS=10V) ... See More ⇒

 ..2. Size:273K  inchange semiconductor
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AOI208

isc N-Channel MOSFET Transistor AOI208 FEATURES Drain Current I =54A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 4.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a... See More ⇒

Detailed specifications: AOD9N40, AOD9N50, AOD9N52, AOD9T40P, AOH3106, AOH3110, AOI11S60, AOI1N60, IRFZ48N, AOI2210, AOI2N60, AOI2N60A, AOI403, AOI409, AOI4102, AOI4126, AOI4130

Keywords - AOI208 MOSFET specs

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