AOI530 Specs and Replacement
Type Designator: AOI530
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 1330 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
Package: TO-251A
AOI530 substitution
- MOSFET ⓘ Cross-Reference Search
AOI530 datasheet
aoi530.pdf
AOI530 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aod538 aoi538.pdf
AOD538/AOI538 30V N-Channel MOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aoi538.pdf
AOD538/AOI538 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aoi538.pdf
isc N-Channel MOSFET Transistor AOI538 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 3.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒
Detailed specifications: AOI4N60, AOI4S60, AOI4T60, AOI4T60P, AOI508, AOI510, AOI514, AOI516, IRF1404, AOI538, AOI5N40, AOI7N60, AOI7N65, AOI7S65, AOI8N25, AOI9N50, AOK10N90
Keywords - AOI530 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: APT12045L2VR
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