All MOSFET. AOI530 Datasheet

 

AOI530 Datasheet and Replacement


   Type Designator: AOI530
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
   Package: TO-251A
 

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AOI530 Datasheet (PDF)

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AOI530

AOI53030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:308K  aosemi
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AOI530

AOD538/AOI53830V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:274K  inchange semiconductor
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AOI530

isc N-Channel MOSFET Transistor AOI538FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: AOI4N60 , AOI4S60 , AOI4T60 , AOI4T60P , AOI508 , AOI510 , AOI514 , AOI516 , IRF1404 , AOI538 , AOI5N40 , AOI7N60 , AOI7N65 , AOI7S65 , AOI8N25 , AOI9N50 , AOK10N90 .

History: IXFN280N085 | AON6242 | HY1804D | KRLML6401 | ELM5B801QA | AON6266 | IXTQ36P15P

Keywords - AOI530 MOSFET datasheet

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