AOI530
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOI530
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 70
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 1330
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0027
Ohm
Package: TO-251A
AOI530
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOI530
Datasheet (PDF)
..1. Size:283K aosemi
aoi530.pdf 
AOI53030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)
9.1. Size:308K aosemi
aoi538.pdf
AOD538/AOI53830V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:274K inchange semiconductor
aoi538.pdf
isc N-Channel MOSFET Transistor AOI538FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
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, IRFP443
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.
