AOI538 MOSFET Datasheet: N-Ch, 30V, 70A. Full specification with pinout and replacement list

AOI538 Specs and Replacement

Type Designator: AOI538

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 915 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm

Package: TO-251A

AOI538 substitution

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AOI538 datasheet

..1. Size:655K aosemi
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AOD538/AOI538 30V N-Channel MOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

..2. Size:308K aosemi
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AOD538/AOI538 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

..3. Size:274K inchange semiconductor
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isc N-Channel MOSFET Transistor AOI538 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 3.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒

9.1. Size:283K aosemi
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AOI530 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOI4S60, AOI4T60, AOI4T60P, AOI508, AOI510, AOI514, AOI516, AOI530, IRLZ44N, AOI5N40, AOI7N60, AOI7N65, AOI7S65, AOI8N25, AOI9N50, AOK10N90, AOK18N65