All MOSFET. AOI538 Datasheet

 

AOI538 Datasheet and Replacement


   Type Designator: AOI538
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 915 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: TO-251A
 

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AOI538 Datasheet (PDF)

 ..1. Size:308K  aosemi
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AOI538

AOD538/AOI53830V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

 ..2. Size:274K  inchange semiconductor
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AOI538

isc N-Channel MOSFET Transistor AOI538FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:283K  aosemi
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AOI538

AOI53030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AOI4S60 , AOI4T60 , AOI4T60P , AOI508 , AOI510 , AOI514 , AOI516 , AOI530 , IRFP260N , AOI5N40 , AOI7N60 , AOI7N65 , AOI7S65 , AOI8N25 , AOI9N50 , AOK10N90 , AOK18N65 .

History: SI1405BDH | RQ6E035AT | RQ5E025AT | STD3PK50Z | 90N02 | APT3565BN | SLF7N65C

Keywords - AOI538 MOSFET datasheet

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