AOI9N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOI9N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 178 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 44 nS
Drain-Source Capacitance (Cd): 98 pF
Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
Package: TO-251A
AOI9N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOI9N50 Datasheet (PDF)
0.1. aoi9n50.pdf 
Size:388K _aosemi
AOD9N50/AOI9N50 500V,9A N-Channel MOSFET General Description Product Summary The AOD9N50 & AOI9N50 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 600V@150℃ to deliver high levels of performance and robustness in ID (at VGS=10V) 9A popular AC-DC applications. RDS(ON) (at VGS=10V) < 0.86Ω By providing low RDS(on), Ciss and Crss along with
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