All MOSFET. AOI9N50 Datasheet

 

AOI9N50 Datasheet and Replacement


   Type Designator: AOI9N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 44 nS
   Cossⓘ - Output Capacitance: 98 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-251A
 

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AOI9N50 Datasheet (PDF)

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AOI9N50

AOD9N50/AOI9N50500V,9A N-Channel MOSFETGeneral Description Product SummaryThe AOD9N50 & AOI9N50 have been fabricated using anadvanced high voltage MOSFET process that is designed VDS 600V@150to deliver high levels of performance and robustness in ID (at VGS=10V) 9Apopular AC-DC applications. RDS(ON) (at VGS=10V)

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AOI9N50

isc N-Channel MOSFET Transistor AOI9N50FEATURESDrain Current I = 9.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.86(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Datasheet: AOI516 , AOI530 , AOI538 , AOI5N40 , AOI7N60 , AOI7N65 , AOI7S65 , AOI8N25 , P55NF06 , AOK10N90 , AOK18N65 , AOK20N60 , AOK20S60 , AOK22N50 , AOK27S60 , AOK29S50 , AOK40N30 .

History: JCS7N60F | QJD1210007 | F3V90HVX2 | BUK9628-100A | DH300P06I | BSC0993ND | IRF351

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