All MOSFET. AOI9N50 Datasheet


AOI9N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOI9N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 178 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 44 nS

Drain-Source Capacitance (Cd): 98 pF

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TO-251A

AOI9N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


AOI9N50 Datasheet (PDF)

0.1. aoi9n50.pdf Size:388K _aosemi


AOD9N50/AOI9N50 500V,9A N-Channel MOSFET General Description Product Summary The AOD9N50 & AOI9N50 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 600V@150℃ to deliver high levels of performance and robustness in ID (at VGS=10V) 9A popular AC-DC applications. RDS(ON) (at VGS=10V) < 0.86Ω By providing low RDS(on), Ciss and Crss along with

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