AOI9N50 Specs and Replacement
Type Designator: AOI9N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 98 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-251A
AOI9N50 substitution
AOI9N50 Specs
aoi9n50.pdf
AOD9N50/AOI9N50 500V,9A N-Channel MOSFET General Description Product Summary The AOD9N50 & AOI9N50 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 600V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 9A popular AC-DC applications. RDS(ON) (at VGS=10V) ... See More ⇒
aoi9n50.pdf
isc N-Channel MOSFET Transistor AOI9N50 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.86 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
Detailed specifications: AOI516 , AOI530 , AOI538 , AOI5N40 , AOI7N60 , AOI7N65 , AOI7S65 , AOI8N25 , IRF3710 , AOK10N90 , AOK18N65 , AOK20N60 , AOK20S60 , AOK22N50 , AOK27S60 , AOK29S50 , AOK40N30 .
Keywords - AOI9N50 MOSFET specs
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