All MOSFET. AOK29S50 Datasheet

 

AOK29S50 Datasheet and Replacement


   Type Designator: AOK29S50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 26.6 nC
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO-247
 

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AOK29S50 Datasheet (PDF)

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AOK29S50

AOK29S50TM500V 29A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 600VThe AOK29S50 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 120Ahigh levels of performance and robustness in switching RDS(ON),max 0.15applications. Qg,typ 26.6nCBy providing low RDS(on), Qg and EOSS along with Eoss @ 400V

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AOK29S50

isc N-Channel MOSFET Transistor AOK29S50FEATURESDrain Current I = 29A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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