AOK29S50 Specs and Replacement
Type Designator: AOK29S50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 29 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 88 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO-247
AOK29S50 substitution
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AOK29S50 datasheet
aok29s50.pdf
AOK29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOK29S50 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 120A high levels of performance and robustness in switching RDS(ON),max 0.15 applications. Qg,typ 26.6nC By providing low RDS(on), Qg and EOSS along with Eoss @ 400V ... See More ⇒
aok29s50.pdf
isc N-Channel MOSFET Transistor AOK29S50 FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
Detailed specifications: AOI8N25, AOI9N50, AOK10N90, AOK18N65, AOK20N60, AOK20S60, AOK22N50, AOK27S60, 7N65, AOK40N30, AOK42S60, AOK53S60, AOK5N100, AOK60N30, AOK8N80, AOK9N90, AOL1202
Keywords - AOK29S50 MOSFET specs
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