All MOSFET. AOK5N100 Datasheet

 

AOK5N100 Datasheet and Replacement


   Type Designator: AOK5N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO-247
 

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AOK5N100 Datasheet (PDF)

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AOK5N100

AOK5N1001000V,4A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOK5N100 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

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AOK5N100

isc N-Channel MOSFET Transistor AOK5N100FEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: AOK20N60 , AOK20S60 , AOK22N50 , AOK27S60 , AOK29S50 , AOK40N30 , AOK42S60 , AOK53S60 , 2N7000 , AOK60N30 , AOK8N80 , AOK9N90 , AOL1202 , AOL1208 , AOL1240 , AOL1242 , AOL1401 .

History: S80N08S | FDS7066N7 | CES2309 | SM4303PSU | FIR120N08PG | 2SJ389S | DTU09N03

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