All MOSFET. AOK8N80 Datasheet

 

AOK8N80 Datasheet and Replacement


   Type Designator: AOK8N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 101 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.63 Ohm
   Package: TO-247
 

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AOK8N80 Datasheet (PDF)

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AOK8N80

AOK8N80800V,7.4A N-Channel MOSFETGeneral Description Product Summary VDS900@150The AOK8N80 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 7.4Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

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AOK8N80

isc N-Channel MOSFET Transistor AOK8N80FEATURESDrain Current I = 7.4A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.63(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: AOK22N50 , AOK27S60 , AOK29S50 , AOK40N30 , AOK42S60 , AOK53S60 , AOK5N100 , AOK60N30 , 12N60 , AOK9N90 , AOL1202 , AOL1208 , AOL1240 , AOL1242 , AOL1401 , AOL1404 , AOL1413 .

History: IXFX64N50P | P8315BD | UT3N10G-AA3-R | AP2309AGN-HF | DH100P30AE | BLF7G20LS-250P | HGA105N15M

Keywords - AOK8N80 MOSFET datasheet

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