All MOSFET. AOL1712 Datasheet

 

AOL1712 Datasheet and Replacement


   Type Designator: AOL1712
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8.4 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: ULTRA-SO8
 

 AOL1712 substitution

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AOL1712 Datasheet (PDF)

 ..1. Size:253K  aosemi
aol1712.pdf pdf_icon

AOL1712

AOL1712N-Channel Enhancement Mode Field Effect TransistorSRFET TM General Description FeaturesTMVDS (V) = 30VSRFET AOL1712 uses advanced trenchID =65A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON),and low gateRDS(ON)

 9.1. Size:266K  aosemi
aol1704.pdf pdf_icon

AOL1712

AOL1704N-Channel Enhancement Mode Field Effect TransistorSRFET TM General Description FeaturesTMSRFET AOL1704 uses advanced trenchVDS (V) = 30Vtechnology with a monolithically integrated SchottkyID =50A (VGS = 10V)diode to provide excellent RDS(ON),and low gatecharge. This device is suitable for use as a low side RDS(ON)

 9.2. Size:244K  aosemi
aol1700.pdf pdf_icon

AOL1712

AOL1700N-Channel Enhancement Mode Field Effect TransistorSRFET TM General Description FeaturesTMVDS (V) = 30VSRFET AOL1700 uses advanced trenchID =85A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON),and low gateRDS(ON)

Datasheet: AOL1428A , AOL1432 , AOL1432A , AOL1448 , AOL1454 , AOL1458 , AOL1482 , AOL1700 , AO4407 , AON1605 , AON1606 , AON1610 , AON1611 , AON1620 , AON1634 , AON2240 , AON2260 .

Keywords - AOL1712 MOSFET datasheet

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