AOL1712 PDF and Equivalents Search

 

AOL1712 Specs and Replacement

Type Designator: AOL1712

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.4 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: ULTRA-SO8

AOL1712 substitution

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AOL1712 datasheet

 ..1. Size:253K  aosemi
aol1712.pdf pdf_icon

AOL1712

AOL1712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM VDS (V) = 30V SRFET AOL1712 uses advanced trench ID =65A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate RDS(ON) ... See More ⇒

 9.1. Size:266K  aosemi
aol1704.pdf pdf_icon

AOL1712

AOL1704 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1704 uses advanced trench VDS (V) = 30V technology with a monolithically integrated Schottky ID =50A (VGS = 10V) diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side RDS(ON) ... See More ⇒

 9.2. Size:244K  aosemi
aol1700.pdf pdf_icon

AOL1712

AOL1700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM VDS (V) = 30V SRFET AOL1700 uses advanced trench ID =85A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate RDS(ON) ... See More ⇒

Detailed specifications: AOL1428A, AOL1432, AOL1432A, AOL1448, AOL1454, AOL1458, AOL1482, AOL1700, IRF530, AON1605, AON1606, AON1610, AON1611, AON1620, AON1634, AON2240, AON2260

Keywords - AOL1712 MOSFET specs

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