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AON2705 Specs and Replacement


   Type Designator: AON2705
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
   Package: DFN2X2
 

 AON2705 substitution

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AON2705 Specs

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AON2705

AON2705 30V P-Channel MOSFET with Schottky Diode General Description Product Summary VDS The AON2705 uses advanced trench technology to -30V provide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -3.0A diode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V) ... See More ⇒

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AON2705

AON2707 30V P-Channel MOSFET with Schottky Diode General Description Product Summary VDS The AON2707 uses advanced trench technology to -30V provide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -4A diode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V) ... See More ⇒

 8.2. Size:222K  aosemi
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AON2705

AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON2701/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON) and low gate charge. A ID = -3A (VGS = -4.5V) Schottky diode is provided to facilitate the RDS(ON) ... See More ⇒

Detailed specifications: AON2406 , AON2407 , AON2408 , AON2409 , AON2410 , AON2411 , AON2420 , AON2701 , STF13NM60N , AON2707 , AON2800 , AON2801 , AON2802 , AON2803 , AON2809 , AON2810 , AON2812 .

History: SI7326DN

Keywords - AON2705 MOSFET specs

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