All MOSFET. AON2705 Datasheet

 

AON2705 Datasheet and Replacement


   Type Designator: AON2705
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
   Package: DFN2X2
 

 AON2705 substitution

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AON2705 Datasheet (PDF)

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AON2705

AON270530V P-Channel MOSFETwith Schottky DiodeGeneral Description Product SummaryVDSThe AON2705 uses advanced trench technology to -30Vprovide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -3.0Adiode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V)

 8.1. Size:301K  aosemi
 aon2707.pdf pdf_icon

AON2705

AON270730V P-Channel MOSFETwith Schottky DiodeGeneral Description Product SummaryVDSThe AON2707 uses advanced trench technology to -30Vprovide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -4Adiode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V)

 8.2. Size:222K  aosemi
 aon2701.pdf pdf_icon

AON2705

AON2701P-Channel Enhancement Mode Field Effect Transistorwith Schottky DiodeGeneral Description FeaturesThe AON2701/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON) and low gate charge. A ID = -3A (VGS = -4.5V)Schottky diode is provided to facilitate the RDS(ON)

Datasheet: AON2406 , AON2407 , AON2408 , AON2409 , AON2410 , AON2411 , AON2420 , AON2701 , IRFZ24N , AON2707 , AON2800 , AON2801 , AON2802 , AON2803 , AON2809 , AON2810 , AON2812 .

History: BUK7M33-60E

Keywords - AON2705 MOSFET datasheet

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