AON2705 Specs and Replacement
Type Designator: AON2705
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 44 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
Package: DFN2X2
AON2705 substitution
AON2705 Specs
aon2705.pdf
AON2705 30V P-Channel MOSFET with Schottky Diode General Description Product Summary VDS The AON2705 uses advanced trench technology to -30V provide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -3.0A diode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V) ... See More ⇒
aon2707.pdf
AON2707 30V P-Channel MOSFET with Schottky Diode General Description Product Summary VDS The AON2707 uses advanced trench technology to -30V provide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -4A diode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V) ... See More ⇒
aon2701.pdf
AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON2701/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON) and low gate charge. A ID = -3A (VGS = -4.5V) Schottky diode is provided to facilitate the RDS(ON) ... See More ⇒
Detailed specifications: AON2406 , AON2407 , AON2408 , AON2409 , AON2410 , AON2411 , AON2420 , AON2701 , STF13NM60N , AON2707 , AON2800 , AON2801 , AON2802 , AON2803 , AON2809 , AON2810 , AON2812 .
History: SI7326DN
Keywords - AON2705 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SI7326DN
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