AON2705 MOSFET. Datasheet pdf. Equivalent
Type Designator: AON2705
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 44 pF
Maximum Drain-Source On-State Resistance (Rds): 0.108 Ohm
Package: DFN2x2
AON2705 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON2705 Datasheet (PDF)
1.1. aon2705.pdf 
Size:393K _aosemi
AON2705 30V P-Channel MOSFET with Schottky Diode General Description Product Summary VDS The AON2705 uses advanced trench technology to -30V provide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -3.0A diode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V) < 108mΩ bidirectional blocking switch, or for DC-DC conversion RDS(ON) (at VGS =
4.1. aon2707.pdf Size:301K _aosemi
AON2707 30V P-Channel MOSFET with Schottky Diode General Description Product Summary VDS The AON2707 uses advanced trench technology to -30V provide excellent RDS(ON) and low gate charge. A Schottky ID (at VGS=-10V) -4A diode is provided to facilitate the implementation of a RDS(ON) (at VGS=-10V) < 117mΩ bidirectional blocking switch, or for DC-DC conversion RDS(ON) (at VGS=-4.5
4.2. aon2701.pdf Size:222K _aosemi
AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON2701/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON) and low gate charge. A ID = -3A (VGS = -4.5V) Schottky diode is provided to facilitate the RDS(ON) < 120mΩ (VGS = -4.5V) implementation of a bidirectional blocking switch, or RDS(ON) <
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
