All MOSFET. AON3611 Datasheet

 

AON3611 Datasheet and Replacement


   Type Designator: AON3611
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1(2.5) W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 5(6) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1.5(5.5) nS
   Cossⓘ - Output Capacitance: 35(100) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05(0.038) Ohm
   Package: DFN3X3
 

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AON3611 Datasheet (PDF)

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AON3611

AON361130V Complementary MOSFETGeneral Description Product SummaryN-channel P-channelThe AON3611 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. TheVDS (V) = 30V VDS (V) = -30Vcomplementary MOSFETs may be used in inverter andID = 5A ID = -6A (VGS = 10V)other applications.RDS(ON)

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AON3611

AON361330V Complementary MOSFETGeneral Description Product SummaryN-channel P-channelThe AON3613 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. TheVDS (V) = 30V VDS (V) = -30Vcomplementary MOSFETs may be used in inverter andID = 4.5A ID = -4.5A (VGS = 10V)other applications.RDS(ON)

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