AON3816 Datasheet and Replacement
Type Designator: AON3816
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 600 nS
Cossⓘ - Output Capacitance: 155 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: DFN3X3
AON3816 substitution
AON3816 Datasheet (PDF)
aon3816.pdf
AON381620V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3816 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)
aon3814.pdf
AON381420V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3814 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 6Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)
aon3818.pdf
AON381824V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V)
aon3814.pdf
AON381420V Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON3814 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 6Awith gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V)
Datasheet: AON2810 , AON2812 , AON3402 , AON3419 , AON3611 , AON3613 , AON3806 , AON3814 , MMD60R360PRH , AON3818 , AON4420L , AON4421 , AON4605 , AON4703 , AON4803 , AON4805L , AON4807 .
History: DH100P18V
Keywords - AON3816 MOSFET datasheet
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History: DH100P18V
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