AON3816 MOSFET Datasheet: N-Ch, 20V, 4A. Full specification with pinout and replacement list

AON3816 Specs and Replacement

   Type Designator: AON3816
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 600 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: DFN3X3

AON3816 substitution

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AON3816 datasheet

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AON3816 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON3816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS = 4.5V) ... See More ⇒

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AON3818 24V Dual N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 24V Low RDS(ON) ID (at VGS=4.5V) 8A Low Gate Charge RDS(ON) (at VGS=4.5V) ... See More ⇒

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