All MOSFET. AON4703 Datasheet

 

AON4703 Datasheet and Replacement


   Type Designator: AON4703
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: DFN2X3
 

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AON4703 Datasheet (PDF)

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AON4703

AON470320V P-Channel MOSFET with Schottky DiodeGeneral Description FeaturesThe AON4703 uses advanced trench technology to provide VDS (V) = -20Vexcellent R and low gate charge. A Schottky diode is ID = -3.4A (VGS = -4.5V)DS(ON)provided to facilitate the implementation of a bidirectional RDS(ON)

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AON4703

AON4701P-Channel Enhancement Mode Field Effect Transistorwith Schottky DiodeGeneral Description FeaturesThe AON4701 uses advanced trench technology to provide VDS (V) = -20Vexcellent R DS(ON) and low gate charge. A Schottky diode is ID = -3.4A (VGS = -4.5V)provided to facilitate the implementation of a bidirectional RDS(ON)

Datasheet: AON3613 , AON3806 , AON3814 , AON3816 , AON3818 , AON4420L , AON4421 , AON4605 , MMD60R360PRH , AON4803 , AON4805L , AON4807 , AON5802B , AON5810 , AON5820 , AON6202 , AON6204 .

History: 2SK633 | WML13N80M3

Keywords - AON4703 MOSFET datasheet

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