AON4703 Datasheet and Replacement
Type Designator: AON4703
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: DFN2X3
AON4703 substitution
AON4703 Datasheet (PDF)
aon4703.pdf

AON470320V P-Channel MOSFET with Schottky DiodeGeneral Description FeaturesThe AON4703 uses advanced trench technology to provide VDS (V) = -20Vexcellent R and low gate charge. A Schottky diode is ID = -3.4A (VGS = -4.5V)DS(ON)provided to facilitate the implementation of a bidirectional RDS(ON)
aon4701.pdf

AON4701P-Channel Enhancement Mode Field Effect Transistorwith Schottky DiodeGeneral Description FeaturesThe AON4701 uses advanced trench technology to provide VDS (V) = -20Vexcellent R DS(ON) and low gate charge. A Schottky diode is ID = -3.4A (VGS = -4.5V)provided to facilitate the implementation of a bidirectional RDS(ON)
Datasheet: AON3613 , AON3806 , AON3814 , AON3816 , AON3818 , AON4420L , AON4421 , AON4605 , MMD60R360PRH , AON4803 , AON4805L , AON4807 , AON5802B , AON5810 , AON5820 , AON6202 , AON6204 .
History: PE532DY | OSG60R1K8PF
Keywords - AON4703 MOSFET datasheet
AON4703 cross reference
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History: PE532DY | OSG60R1K8PF



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