AON4703 Specs and Replacement

Type Designator: AON4703

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: DFN2X3

AON4703 substitution

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AON4703 datasheet

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AON4703

AON4703 20V P-Channel MOSFET with Schottky Diode General Description Features The AON4703 uses advanced trench technology to provide VDS (V) = -20V excellent R and low gate charge. A Schottky diode is ID = -3.4A (VGS = -4.5V) DS(ON) provided to facilitate the implementation of a bidirectional RDS(ON) ... See More ⇒

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AON4703

AON4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON4701 uses advanced trench technology to provide VDS (V) = -20V excellent R DS(ON) and low gate charge. A Schottky diode is ID = -3.4A (VGS = -4.5V) provided to facilitate the implementation of a bidirectional RDS(ON) ... See More ⇒

Detailed specifications: AON3613, AON3806, AON3814, AON3816, AON3818, AON4420L, AON4421, AON4605, RU7088R, AON4803, AON4805L, AON4807, AON5802B, AON5810, AON5820, AON6202, AON6204

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.