All MOSFET. AON6522 Datasheet

 

AON6522 MOSFET. Datasheet pdf. Equivalent

Type Designator: AON6522

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 200 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 49.7 nC

Rise Time (tr): 12.8 nS

Drain-Source Capacitance (Cd): 2778 pF

Maximum Drain-Source On-State Resistance (Rds): 0.00095 Ohm

Package: DFN5x6

AON6522 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON6522 Datasheet (PDF)

1.1. aon6522.pdf Size:280K _aosemi

AON6522
AON6522

AON6522 25V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology 25V • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 200A • Low Gate Charge RDS(ON) (at VGS=10V) < 0.95mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 1.3mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters

4.1. aon6526.pdf Size:305K _aosemi

AON6522
AON6522

AON6526 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 7mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 9mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in Co

4.2. aon6528.pdf Size:358K _aosemi

AON6522
AON6522

AON6528 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 6.3mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 9.8mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i

 4.3. aon6524.pdf Size:456K _aosemi

AON6522
AON6522

AON6524 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 68A • Low Gate Charge RDS(ON) (at VGS=10V) < 5.0mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 8.5mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i

4.4. aon6520.pdf Size:248K _aosemi

AON6522
AON6522

AON6520 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6520 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) < 8.5mΩ general purpose applications. RDS(ON) (at VGS=4.5V) < 11mΩ 100% UIS Tested 100% Rg Tested D DFN5X

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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