AON7408 Datasheet. Specs and Replacement
The AON7408 is an N-channel enhancement mode MOSFET designed for high-efficiency switching applications. Featuring a low on-resistance of 20mΩ and a maximum drain current of 18A, it ensures minimal conduction losses in power management circuits. The device operates with a maximum drain-source voltage of 30V, making it suitable for battery-powered systems and DC-DC converters. Its fast switching capability, supported by low gate charge, enhances performance in high-frequency applications. The AON7408 comes in a compact surface-mount package, offering thermal efficiency and ease of PCB integration. Its rugged design provides high reliability for automotive, industrial, consumer electronics.
Type Designator: AON7408 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 11 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.8 nS
Cossⓘ - Output Capacitance: 67 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: DFN3X3EP
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AON7408 datasheet
..1. Size:262K 1
aon7408.pdf 
AON7408 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18A This device is suitable for use in general purpose RDS(ON) (at VGS=10V) ... See More ⇒
..2. Size:262K aosemi
aon7408.pdf
AON7408 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18A This device is suitable for use in general purpose RDS(ON) (at VGS=10V) ... See More ⇒
8.1. Size:319K 1
aon7405.pdf
AON7405 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50A This device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V) ... See More ⇒
8.2. Size:270K 1
aon7406.pdf
AON7406 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25A This device is suitable for use in SMPS and general RDS(ON) (at VGS=10V) ... See More ⇒
8.3. Size:172K 1
aon7403.pdf
AON7403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V) ... See More ⇒
8.5. Size:323K 1
aon7409.pdf
AON7409 30V P-Channel MOSFET General Description Product Summary VDS The AON7409 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -32A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V) ... See More ⇒
8.6. Size:269K 1
aon7401.pdf
AON7401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V) ... See More ⇒
8.7. Size:495K 1
aon7407.pdf
AON7407 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V) ... See More ⇒
8.8. Size:199K aosemi
aon7400.pdf
AON7400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 26A This device is suitable for use in DC - DC converters and RDS(ON) (at VGS=10V) ... See More ⇒
8.9. Size:319K aosemi
aon7405.pdf
AON7405 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50A This device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V) ... See More ⇒
8.10. Size:301K aosemi
aon7402.pdf
AON7402 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7402 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 39A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V) ... See More ⇒
8.11. Size:270K aosemi
aon7406.pdf
AON7406 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25A This device is suitable for use in SMPS and general RDS(ON) (at VGS=10V) ... See More ⇒
8.12. Size:172K aosemi
aon7403.pdf
AON7403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V) ... See More ⇒
8.14. Size:333K aosemi
aon7400b.pdf
AON7400B 30V N-Channel MOSFET General Description Product Summary VDS Latest Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
8.15. Size:323K aosemi
aon7409.pdf
AON7409 30V P-Channel MOSFET General Description Product Summary VDS The AON7409 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -32A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V) ... See More ⇒
8.16. Size:269K aosemi
aon7401.pdf
AON7401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V) ... See More ⇒
8.17. Size:344K aosemi
aon7404g.pdf
AON7404G 20V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V) ... See More ⇒
8.18. Size:242K aosemi
aon7407.pdf
AON7407 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V) ... See More ⇒
8.19. Size:233K aosemi
aon7404.pdf
AON7404 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON7404 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 20A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V) ... See More ⇒
Detailed specifications: AON7400A, AON7401, AON7402, AON7403, AON7404, AON7405, AON7406, AON7407, STP75NF75, AON7409, AON7410, AON7412, AON7414, AON7416, AON7418, AON7421, AON7422E
Keywords - AON7408 MOSFET specs
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