All MOSFET. AOP605 Datasheet

 

AOP605 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOP605
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 7.5(6.6) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.74 nC
   trⓘ - Rise Time: 4.1(5.7) nS
   Cossⓘ - Output Capacitance: 102(190) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028(0.035) Ohm
   Package: PDIP-8

 AOP605 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOP605 Datasheet (PDF)

 ..1. Size:579K  aosemi
 aop605.pdf

AOP605 AOP605

AOP605Complementary Enhancement Mode Field Effect TransistorGeneral Description Featuresn-channel p-channelThe AOP605/L uses advanced trench technology to VDS (V) = 30V -30Vprovide excellent RDS(ON) and low gate charge. TheID = 7.5A (VGS = 10V) -6.6A (VGS = -10V)complementary MOSFETs form a high-speed powerinverter, suitable for a multitude of applications.RDS(ON)AOP605 and

 9.1. Size:179K  aosemi
 aop609.pdf

AOP605 AOP605

AOP609Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOP609 uses advanced trench technology n-channel p-channelMOSFETs to provide excellent RDS(ON) and low VDS (V) = 60V -60Vgate charge. The complementary MOSFETs ID = 4.7A (VGS=10V) -3.5A (VGS=-10V)may be used in H-bridge, Inverters and other RDS(ON) RDS(ON) applications. Standard Product A

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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