All MOSFET. AOP605 Datasheet

 

AOP605 Datasheet and Replacement


   Type Designator: AOP605
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.5(6.6) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.1(5.7) nS
   Cossⓘ - Output Capacitance: 102(190) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028(0.035) Ohm
   Package: PDIP-8
 

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AOP605 Datasheet (PDF)

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AOP605

AOP605Complementary Enhancement Mode Field Effect TransistorGeneral Description Featuresn-channel p-channelThe AOP605/L uses advanced trench technology to VDS (V) = 30V -30Vprovide excellent RDS(ON) and low gate charge. TheID = 7.5A (VGS = 10V) -6.6A (VGS = -10V)complementary MOSFETs form a high-speed powerinverter, suitable for a multitude of applications.RDS(ON)AOP605 and

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AOP605

AOP609Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOP609 uses advanced trench technology n-channel p-channelMOSFETs to provide excellent RDS(ON) and low VDS (V) = 60V -60Vgate charge. The complementary MOSFETs ID = 4.7A (VGS=10V) -3.5A (VGS=-10V)may be used in H-bridge, Inverters and other RDS(ON) RDS(ON) applications. Standard Product A

Datasheet: AON7810 , AON7812 , AON7820 , AON7826 , AON7900 , AON7902 , AON7932 , AON7934 , HY1906P , AOP609 , AOT10N60 , AOT10N65 , AOT10T60P , AOT1100L , AOT11C60 , AOT11N60 , AOT11N70 .

Keywords - AOP605 MOSFET datasheet

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