AOP605 Specs and Replacement

Type Designator: AOP605

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5(6.6) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.1(5.7) nS

Cossⓘ - Output Capacitance: 102(190) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028(0.035) Ohm

Package: PDIP-8

AOP605 substitution

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AOP605 datasheet

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AOP605

AOP605 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel The AOP605/L uses advanced trench technology to VDS (V) = 30V -30V provide excellent RDS(ON) and low gate charge. The ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V) complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. RDS(ON) AOP605 and ... See More ⇒

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AOP605

AOP609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOP609 uses advanced trench technology n-channel p-channel MOSFETs to provide excellent RDS(ON) and low VDS (V) = 60V -60V gate charge. The complementary MOSFETs ID = 4.7A (VGS=10V) -3.5A (VGS=-10V) may be used in H-bridge, Inverters and other RDS(ON) RDS(ON) applications. Standard Product A... See More ⇒

Detailed specifications: AON7810, AON7812, AON7820, AON7826, AON7900, AON7902, AON7932, AON7934, AOD4184A, AOP609, AOT10N60, AOT10N65, AOT10T60P, AOT1100L, AOT11C60, AOT11N60, AOT11N70

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