All MOSFET. AOP609 Datasheet

 

AOP609 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOP609
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.7(3.5) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5.5(7.2) nS
   Cossⓘ - Output Capacitance: 74(88) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06(0.115) Ohm
   Package: PDIP-8

 AOP609 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOP609 Datasheet (PDF)

 ..1. Size:179K  aosemi
 aop609.pdf

AOP609 AOP609

AOP609Complementary Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOP609 uses advanced trench technology n-channel p-channelMOSFETs to provide excellent RDS(ON) and low VDS (V) = 60V -60Vgate charge. The complementary MOSFETs ID = 4.7A (VGS=10V) -3.5A (VGS=-10V)may be used in H-bridge, Inverters and other RDS(ON) RDS(ON) applications. Standard Product A

 9.1. Size:579K  aosemi
 aop605.pdf

AOP609 AOP609

AOP605Complementary Enhancement Mode Field Effect TransistorGeneral Description Featuresn-channel p-channelThe AOP605/L uses advanced trench technology to VDS (V) = 30V -30Vprovide excellent RDS(ON) and low gate charge. TheID = 7.5A (VGS = 10V) -6.6A (VGS = -10V)complementary MOSFETs form a high-speed powerinverter, suitable for a multitude of applications.RDS(ON)AOP605 and

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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