AOT1N60 PDF and Equivalents Search

 

AOT1N60 Specs and Replacement

Type Designator: AOT1N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V

Qg ⓘ - Total Gate Charge: 6.1 nC

tr ⓘ - Rise Time: 6.7 nS

Cossⓘ - Output Capacitance: 14.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm

Package: TO-220

AOT1N60 substitution

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AOT1N60 datasheet

 ..1. Size:131K  aosemi
 aot1n60.pdf pdf_icon

AOT1N60

AOT1N60 600V,1.3A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 1.3A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) ... See More ⇒

 ..2. Size:261K  inchange semiconductor
 aot1n60.pdf pdf_icon

AOT1N60

isc N-Channel MOSFET Transistor AOT1N60 FEATURES Drain Current I =1.3A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 9.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

Detailed specifications: AOT13N50 , AOT1404L , AOT14N50 , AOT14N50FD , AOT15S60 , AOT1606L , AOT1608L , AOT16N50 , 10N60 , AOT20C60 , AOT20N25 , AOT20N60 , AOT20S60 , AOT210L , AOT22N50 , AOT240L , AOT2500L .

Keywords - AOT1N60 MOSFET specs

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