All MOSFET. AOT1N60 Datasheet


AOT1N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOT1N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 41.7 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 1.3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 6.7 nS

Drain-Source Capacitance (Cd): 14.5 pF

Maximum Drain-Source On-State Resistance (Rds): 9 Ohm

Package: TO-220

AOT1N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


AOT1N60 Datasheet (PDF)

1.1. aot1n60.pdf Size:131K _aosemi


AOT1N60 600V,1.3A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 1.3A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) < 9Ω DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avala

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .


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