AOT1N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOT1N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 41.7 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 1.3 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 6.7 nS
Drain-Source Capacitance (Cd): 14.5 pF
Maximum Drain-Source On-State Resistance (Rds): 9 Ohm
Package: TO-220
AOT1N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOT1N60 Datasheet (PDF)
1.1. aot1n60.pdf 
Size:131K _aosemi
AOT1N60 600V,1.3A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 1.3A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) < 9Ω DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avala
Datasheet: AOT13N50 , AOT1404L , AOT14N50 , AOT14N50FD , AOT15S60 , AOT1606L , AOT1608L , AOT16N50 , RFP50N06 , AOT20C60 , AOT20N25 , AOT20N60 , AOT20S60 , AOT210L , AOT22N50 , AOT240L , AOT2500L .
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