AOT1N60 MOSFET. Datasheet pdf. Equivalent

   Type Designator: AOT1N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 1.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.1 nC
   trⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 14.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
   Package: TO-220

AOT1N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS