AOT1N60 Datasheet and Replacement
Type Designator: AOT1N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 41.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6.7 nS
Cossⓘ - Output Capacitance: 14.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
Package: TO-220
AOT1N60 substitution
AOT1N60 Datasheet (PDF)
aot1n60.pdf

AOT1N60600V,1.3A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT1N60 have been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 1.3Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)
aot1n60.pdf

isc N-Channel MOSFET Transistor AOT1N60FEATURESDrain Current I =1.3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 9.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: AOT13N50 , AOT1404L , AOT14N50 , AOT14N50FD , AOT15S60 , AOT1606L , AOT1608L , AOT16N50 , IRFB4227 , AOT20C60 , AOT20N25 , AOT20N60 , AOT20S60 , AOT210L , AOT22N50 , AOT240L , AOT2500L .
History: IXFH50N20
Keywords - AOT1N60 MOSFET datasheet
AOT1N60 cross reference
AOT1N60 equivalent finder
AOT1N60 lookup
AOT1N60 substitution
AOT1N60 replacement
History: IXFH50N20



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