AOT2610L MOSFET Datasheet: N-Ch, 60V, 55A. Full specification with pinout and replacement list

AOT2610L Specs and Replacement

Type Designator: AOT2610L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 177 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm

Package: TO-220

AOT2610L substitution

- MOSFET ⓘ Cross-Reference Search

AOT2610L datasheet

..1. Size:348K aosemi
aot2610l.pdf pdf_icon

... See More ⇒

..2. Size:348K aosemi
aot2610l aotf2610l.pdf pdf_icon

... See More ⇒

..3. Size:261K inchange semiconductor
aot2610l.pdf pdf_icon

isc N-Channel MOSFET Transistor AOT2610L FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 10.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

8.1. Size:367K aosemi
aot2618l.pdf pdf_icon

AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒