AOTF12T60 Specs and Replacement
Type Designator: AOTF12T60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 76 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO-220F
AOTF12T60 substitution
- MOSFET ⓘ Cross-Reference Search
AOTF12T60 datasheet
aotf12t60.pdf
AOTF12T60 600V,12A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V Latest Trench Power AlphaMOS-II technology Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max ... See More ⇒
aotf12t60p.pdf
AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max ... See More ⇒
aob12t60p aotf12t60p.pdf
AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max ... See More ⇒
aotf12t50p.pdf
AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max ... See More ⇒
Detailed specifications: AOTF11S65, AOTF12N30, AOTF12N50, AOTF12N60, AOTF12N60FD, AOTF12N65, AOTF12T50P, AOTF12T50PL, IRFB4110, AOTF12T60P, AOTF13N50, AOTF14N50, AOTF14N50FD, AOTF15S60, AOTF15S65, AOTF16N50, AOTF18N65
Keywords - AOTF12T60 MOSFET specs
AOTF12T60 cross reference
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AOTF12T60 replacement
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History: 2SK3899-ZK | 7N65G-T2Q-T
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