HP4936DY Datasheet and Replacement
Type Designator: HP4936DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: SO8
HP4936DY substitution
HP4936DY Datasheet (PDF)
hp4936dy.pdf
HP4936DYData Sheet December 20015.8A, 30V, 0.037 Ohm, Dual N-Channel, FeaturesLogic Level Power MOSFET Logic Level Gate DriveThis power MOSFET is manufactured using an innovative 5.8A, 30Vprocess. This advanced process technology achieves the rDS(ON) = 0.037 at ID = 5.8A, VGS = 10Vlowest possible on-resistance per silicon area, resulting in outstanding performa
Datasheet: HAT2064R , HAT2065R , HAT2068R , HAT2070R , HAT2077R , HEPF2004 , HEPF2007A , HP4410DY , 2SK3878 , HPLR3103 , HPLU3103 , HR3N187 , HR3N200 , HRF3205 , HRF3205S , HRFZ44N , HUF75229P3 .
History: HAT2077R | AUIRFS3607
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History: HAT2077R | AUIRFS3607
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