HPLR3103 MOSFET. Datasheet pdf. Equivalent
Type Designator: HPLR3103
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 52 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO252AA
HPLR3103 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HPLR3103 Datasheet (PDF)
hplr3103 hplu3103.pdf
HPLR3103, HPLU3103Data Sheet July 1999 File Number 4501.252A, 30V, 0.019 Ohm, N-Channel Logic FeaturesLevel, Power MOSFETs Logic Level Gate DriveThese are N-Channel enhancement mode silicon gate 52A, 30Vpower field effect transistors. They are advanced power Low On-Resistance, rDS(ON) = 0.019MOSFETs designed, tested, and guaranteed to withstand aspecified leve
Datasheet: HAT2065R , HAT2068R , HAT2070R , HAT2077R , HEPF2004 , HEPF2007A , HP4410DY , HP4936DY , STP75NF75 , HPLU3103 , HR3N187 , HR3N200 , HRF3205 , HRF3205S , HRFZ44N , HUF75229P3 , HUF75307D3 .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918