All MOSFET. AOV11S60 Datasheet

 

AOV11S60 Datasheet and Replacement


   Type Designator: AOV11S60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 37.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: DFN8X8
 

 AOV11S60 substitution

   - MOSFET ⓘ Cross-Reference Search

 

AOV11S60 Datasheet (PDF)

 ..1. Size:335K  aosemi
 aov11s60.pdf pdf_icon

AOV11S60

AOV11S60TM600V 8A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOV11S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 45Ahigh levels of performance and robustness in switching RDS(ON),max 0.5applications. Qg,typ 11nCBy providing low RDS(on), Qg and EOSS along with Eoss

Datasheet: AOU1N60 , AOU2N60 , AOU2N60A , AOU3N50 , AOU3N60 , AOU4N60 , AOU4S60 , AOU7S65 , IRFB7545 , AOV15S60 , AOV20S60 , AOW10N60 , AOW10N65 , AOW10T60P , AOW11N60 , AOW11S60 , AOW11S65 .

History: AOV20S60

Keywords - AOV11S60 MOSFET datasheet

 AOV11S60 cross reference
 AOV11S60 equivalent finder
 AOV11S60 lookup
 AOV11S60 substitution
 AOV11S60 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.