AOV11S60 PDF and Equivalents Search

 

AOV11S60 Specs and Replacement

Type Designator: AOV11S60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 37.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: DFN8X8

AOV11S60 substitution

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AOV11S60 datasheet

 ..1. Size:335K  aosemi
 aov11s60.pdf pdf_icon

AOV11S60

AOV11S60 TM 600V 8A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOV11S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 45A high levels of performance and robustness in switching RDS(ON),max 0.5 applications. Qg,typ 11nC By providing low RDS(on), Qg and EOSS along with Eoss ... See More ⇒

Detailed specifications: AOU1N60, AOU2N60, AOU2N60A, AOU3N50, AOU3N60, AOU4N60, AOU4S60, AOU7S65, IRFB7545, AOV15S60, AOV20S60, AOW10N60, AOW10N65, AOW10T60P, AOW11N60, AOW11S60, AOW11S65

Keywords - AOV11S60 MOSFET specs

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