AOV15S60 PDF and Equivalents Search

 

AOV15S60 Specs and Replacement

Type Designator: AOV15S60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 58 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: DFN8X8

AOV15S60 substitution

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AOV15S60 datasheet

 ..1. Size:339K  aosemi
 aov15s60.pdf pdf_icon

AOV15S60

AOV15S60 TM 600V 12A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOV15S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 63A high levels of performance and robustness in switching RDS(ON),max 0.36 applications. Qg,typ 16nC By providing low RDS(on), Qg and EOSS along with Eos... See More ⇒

Detailed specifications: AOU2N60, AOU2N60A, AOU3N50, AOU3N60, AOU4N60, AOU4S60, AOU7S65, AOV11S60, AON7403, AOV20S60, AOW10N60, AOW10N65, AOW10T60P, AOW11N60, AOW11S60, AOW11S65, AOW12N50

Keywords - AOV15S60 MOSFET specs

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