All MOSFET. AOV15S60 Datasheet

 

AOV15S60 Datasheet and Replacement


   Type Designator: AOV15S60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: DFN8X8
 

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AOV15S60 Datasheet (PDF)

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AOV15S60

AOV15S60TM600V 12A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOV15S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 63Ahigh levels of performance and robustness in switching RDS(ON),max 0.36applications. Qg,typ 16nCBy providing low RDS(on), Qg and EOSS along with Eos

Datasheet: AOU2N60 , AOU2N60A , AOU3N50 , AOU3N60 , AOU4N60 , AOU4S60 , AOU7S65 , AOV11S60 , EMB04N03H , AOV20S60 , AOW10N60 , AOW10N65 , AOW10T60P , AOW11N60 , AOW11S60 , AOW11S65 , AOW12N50 .

History: PMZB320UPE | 2SK888 | WMN30N80M3 | 2SJ605-Z | NVMFS4C03N | SFF240J | BUZ83

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