HRF3205S Specs and Replacement
Type Designator: HRF3205S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 175 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO263AB
HRF3205S substitution
- MOSFET ⓘ Cross-Reference Search
HRF3205S datasheet
hrf3205.pdf
HRF3205, HRF3205S Data Sheet December 2001 100A, 55V, 0.008 Ohm, N-Channel, Power Features MOSFETs 100A, 55V (See Note) These are N-Channel enhancement mode silicon gate Low On-Resistance, rDS(ON) = 0.008 power field effect transistors. They are advanced power Temperature Compensating PSPICE Model MOSFETs designed, tested, and guaranteed to withstand a specified le... See More ⇒
hrf3205.pdf
isc N-Channel MOSFET Transistor HRF3205 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒
Detailed specifications: HEPF2007A , HP4410DY , HP4936DY , HPLR3103 , HPLU3103 , HR3N187 , HR3N200 , HRF3205 , AON7408 , HRFZ44N , HUF75229P3 , HUF75307D3 , HUF75307D3S , HUF75307D3ST , HUF75307P3 , HUF75307T3ST , HUF75309D3 .
Keywords - HRF3205S MOSFET specs
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