All MOSFET. HRF3205S Datasheet

 

HRF3205S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HRF3205S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 175 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 170 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263AB

 HRF3205S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HRF3205S Datasheet (PDF)

 7.1. Size:189K  fairchild semi
 hrf3205.pdf

HRF3205S HRF3205S

HRF3205, HRF3205SData Sheet December 2001100A, 55V, 0.008 Ohm, N-Channel, Power FeaturesMOSFETs 100A, 55V (See Note)These are N-Channel enhancement mode silicon gate Low On-Resistance, rDS(ON) = 0.008power field effect transistors. They are advanced power Temperature Compensating PSPICE ModelMOSFETs designed, tested, and guaranteed to withstand a specified le

 7.2. Size:259K  inchange semiconductor
 hrf3205.pdf

HRF3205S HRF3205S

isc N-Channel MOSFET Transistor HRF3205FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

Datasheet: HEPF2007A , HP4410DY , HP4936DY , HPLR3103 , HPLU3103 , HR3N187 , HR3N200 , HRF3205 , IRFP260 , HRFZ44N , HUF75229P3 , HUF75307D3 , HUF75307D3S , HUF75307D3ST , HUF75307P3 , HUF75307T3ST , HUF75309D3 .

 

 
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