All MOSFET. AOW4S60 Datasheet

 

AOW4S60 Datasheet and Replacement


   Type Designator: AOW4S60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-262
 

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AOW4S60 Datasheet (PDF)

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AOW4S60

AOW4S60/AOWF4S60TM600V 4A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW4S60 & AOWF4S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 16Adesigned to deliver high levels of performance and RDS(ON),max 0.9robustness in switching applications. Qg,typ 6nCBy providing low RDS(on), Qg and EOSS

 ..2. Size:300K  inchange semiconductor
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AOW4S60

isc N-Channel MOSFET Transistor AOW4S60FEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

Datasheet: AOW284 , AOW2918 , AOW298 , AOW29S50 , AOW410 , AOW418 , AOW480 , AOW482 , 10N60 , AOW7S60 , AOW7S65 , AOWF10N60 , AOWF10N65 , AOWF10T60P , AOWF11C60 , AOWF11N60 , AOWF11N70 .

History: FTK7N65DD | PV501BA | IPB015N04NG | QM4014D | NTD6416AN-1G | PMN70XP | STD6N62K3

Keywords - AOW4S60 MOSFET datasheet

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