AOW4S60 Specs and Replacement
Type Designator: AOW4S60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 21 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO-262
AOW4S60 substitution
- MOSFET ⓘ Cross-Reference Search
AOW4S60 datasheet
aow4s60.pdf
AOW4S60/AOWF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW4S60 & AOWF4S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 16A designed to deliver high levels of performance and RDS(ON),max 0.9 robustness in switching applications. Qg,typ 6nC By providing low RDS(on), Qg and EOSS ... See More ⇒
aow4s60.pdf
isc N-Channel MOSFET Transistor AOW4S60 FEATURES Drain Current I =4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a... See More ⇒
Detailed specifications: AOW284, AOW2918, AOW298, AOW29S50, AOW410, AOW418, AOW480, AOW482, IRFP260N, AOW7S60, AOW7S65, AOWF10N60, AOWF10N65, AOWF10T60P, AOWF11C60, AOWF11N60, AOWF11N70
Keywords - AOW4S60 MOSFET specs
AOW4S60 cross reference
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AOW4S60 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: JCS10N60ST | 4N65KG-TF1-T | SUB85N10-10 | AOU2N60 | AP03N70I-A-HF
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