All MOSFET. AOWF8N50 Datasheet

 

AOWF8N50 Datasheet and Replacement


   Type Designator: AOWF8N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-262F
 

 AOWF8N50 substitution

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AOWF8N50 Datasheet (PDF)

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AOWF8N50

AOWF8N50500V, 8A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOWF8N50 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 8Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

Datasheet: AOWF15S65 , AOWF20S60 , AOWF25S65 , AOWF2606 , AOWF412 , AOWF4N60 , AOWF4S60 , AOWF7S65 , AON7410 , AOWF9N70 , AOY2N60 , AOY423 , AOY514 , AOY516 , AOY526 , AOY528 , 2SJ154 .

History: HGI098N10A | GSM9435WS | SWP9N50D | AFN04N60T220FT | DMN5L06DMKQ | P0550ETF | NVMFS5C638NL

Keywords - AOWF8N50 MOSFET datasheet

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