All MOSFET. AOWF8N50 Datasheet

 

AOWF8N50 Datasheet and Replacement


   Type Designator: AOWF8N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-262F
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AOWF8N50 Datasheet (PDF)

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AOWF8N50

AOWF8N50500V, 8A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOWF8N50 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 8Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

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History: NCE65NF190K | HLML6401 | BLP03N08-BA | BL8N60-A | NP110N055PUG | SIR690DP | AP85T03GH-HF

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