AOWF9N70 Specs and Replacement
Type Designator: AOWF9N70
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 61 nS
Cossⓘ - Output Capacitance: 113 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-262F
AOWF9N70 substitution
- MOSFET ⓘ Cross-Reference Search
AOWF9N70 datasheet
aowf9n70.pdf
AOWF9N70 700V,9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOWF9N70 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 9A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOWF20S60, AOWF25S65, AOWF2606, AOWF412, AOWF4N60, AOWF4S60, AOWF7S65, AOWF8N50, SKD502T, AOY2N60, AOY423, AOY514, AOY516, AOY526, AOY528, 2SJ154, 2SK1101-01MR
Keywords - AOWF9N70 MOSFET specs
AOWF9N70 cross reference
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AOWF9N70 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AOWF11C60 | IRFBC20PBF | DH009N02F
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