All MOSFET. AOWF9N70 Datasheet

 

AOWF9N70 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOWF9N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28.5 nC
   trⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 113 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-262F

 AOWF9N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOWF9N70 Datasheet (PDF)

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 aowf9n70.pdf

AOWF9N70 AOWF9N70

AOWF9N70700V,9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOWF9N70 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 9Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXTT20P50P | IRLI540A

 

 
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