All MOSFET. AOWF9N70 Datasheet

 

AOWF9N70 Datasheet and Replacement


   Type Designator: AOWF9N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 28.5 nC
   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 113 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-262F
 

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AOWF9N70 Datasheet (PDF)

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AOWF9N70

AOWF9N70700V,9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOWF9N70 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 9Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

Datasheet: AOWF20S60 , AOWF25S65 , AOWF2606 , AOWF412 , AOWF4N60 , AOWF4S60 , AOWF7S65 , AOWF8N50 , SKD502T , AOY2N60 , AOY423 , AOY514 , AOY516 , AOY526 , AOY528 , 2SJ154 , 2SK1101-01MR .

History: AOWF8N50 | AOY2N60

Keywords - AOWF9N70 MOSFET datasheet

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