All MOSFET. AOWF9N70 Datasheet

 

AOWF9N70 Datasheet and Replacement


   Type Designator: AOWF9N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 113 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-262F
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AOWF9N70 Datasheet (PDF)

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AOWF9N70

AOWF9N70700V,9A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOWF9N70 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 9Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

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History: STH15NB50FI | HLML6401 | STF11NM60ND | HMS3205 | MS23P25 | HFS10N60U | AP85T03GH-HF

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