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AOY526 Specs and Replacement

Type Designator: AOY526

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-251B

AOY526 substitution

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AOY526 datasheet

 ..1. Size:405K  aosemi
 aoy526.pdf pdf_icon

AOY526

AOY526 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:383K  aosemi
 aoy528.pdf pdf_icon

AOY526

AOY528 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOWF4S60, AOWF7S65, AOWF8N50, AOWF9N70, AOY2N60, AOY423, AOY514, AOY516, 5N65, AOY528, 2SJ154, 2SK1101-01MR, 2SK3515-01MR, 2SK436, 2SK850, 2SK3918, 2SK3918-ZK

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