All MOSFET. APT1004R2KN Datasheet

 

APT1004R2KN MOSFET. Datasheet pdf. Equivalent

Type Designator: APT1004R2KN

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 115 pF

Maximum Drain-Source On-State Resistance (Rds): 4 Ohm

Package: TO220

APT1004R2KN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT1004R2KN Datasheet (PDF)

1.1. apt1004r2kn.pdf Size:51K _apt

APT1004R2KN
APT1004R2KN

D TO-220 G APT1004RKN 1000V 3.6A 4.00Ω S APT1004R2KN 1000V 3.5A 4.20Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT1004R2KN APT1004RKN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current 3.5 3.6 Amps 1 IDM Pulsed Drain Current 14.0 14.4 Amps

1.2. apt1004r2bn.pdf Size:51K _apt

APT1004R2KN
APT1004R2KN

D TO-247 G APT1004RBN 1000V 4.4A 4.00Ω S APT1004R2BN 1000V 4.0A 4.20Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 1004RBN 1004R2BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25°C 4.4 4.0 Amps IDM Pulsed Drain Current 1

 2.1. apt1004rcn.pdf Size:50K _apt

APT1004R2KN
APT1004R2KN

D TO-254 G APT1004RCN 1000V 3.6A 4.00Ω S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT1004RCN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25°C 3.6 Amps IDM Pulsed Drain Current 1 14.4 VGS Gate-Source Voltage ±30 Volts Total Po

2.2. apt1004rgn.pdf Size:50K _apt

APT1004R2KN
APT1004R2KN

D TO-257 G APT1004RGN 1000V 3.3A 4.00Ω S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT1004RGN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25°C 3.3 Amps IDM Pulsed Drain Current 1 13.2 VGS Gate-Source Voltage ±30 Volts Total Po

 2.3. apt1004rkn.pdf Size:55K _apt

APT1004R2KN
APT1004R2KN

D TO-220 G APT1004RKN 1000V 3.6A 4.00Ω S APT1004R2KN 1000V 3.5A 4.20Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT1004R2KN APT1004RKN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current 3.5 3.6 Amps 1 IDM Pulsed Drain Current 14.0 14.4 Amps V

2.4. apt1004rbnr.pdf Size:76K _apt

APT1004R2KN
APT1004R2KN



Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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