APT1201R5SVFR Datasheet and Replacement
Type Designator: APT1201R5SVFR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 370 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: D3PAK
APT1201R5SVFR substitution
APT1201R5SVFR Datasheet (PDF)
apt1201r5bvfrg apt1201r5svfrg.pdf

APT1201R5BVFRAPT1201R5SVFR1200V 10A 1.500POWER MOS VTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switchi
apt1201r5bvfr.pdf

APT1201R5BVFRAPT1201R5SVFR1200V 10A 1.500POWER MOS VTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switchi
apt1201r5bvr.pdf

APT1201R5BVR1200V 10A 1.500POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe
Datasheet: APT10M30AVR , APT11N80BC3 , APT11N80KC3 , APT1201R2BLL , APT1201R2SLL , APT1201R4BLL , APT1201R4SLL , APT1201R5BVFR , IRF3710 , APT1201R6BVFR , APT12031JLL , APT12040JLL , APT12040JVFR , APT12040L2LL , APT12045L2VFR , APT12045L2VR , APT12057B2LL .
History: FDB86366-F085
Keywords - APT1201R5SVFR MOSFET datasheet
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History: FDB86366-F085



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