APT1201R5SVFR
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT1201R5SVFR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 370
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 320
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
D3PAK
APT1201R5SVFR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT1201R5SVFR
Datasheet (PDF)
0.1. Size:144K apt
apt1201r5bvfrg apt1201r5svfrg.pdf
APT1201R5BVFRAPT1201R5SVFR1200V 10A 1.500POWER MOS VTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switchi
5.1. Size:137K apt
apt1201r5bvfr.pdf
APT1201R5BVFRAPT1201R5SVFR1200V 10A 1.500POWER MOS VTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switchi
5.2. Size:63K apt
apt1201r5bvr.pdf
APT1201R5BVR1200V 10A 1.500POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe
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