APT5560AN Specs and Replacement
Type Designator: APT5560AN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 198 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 280 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO3
APT5560AN substitution
- MOSFET ⓘ Cross-Reference Search
APT5560AN datasheet
Detailed specifications: APT50M75JLL, APT50M75JLLU2, APT50M80B2LC, APT50M80B2VFR, APT50M80B2VR, APT50M80JLC, APT50M85B2VFR, APT50M85B2VR, 20N60, APT6010B2LL, APT6010JFLL, APT6010JLL, APT6011B2VFR, APT6011B2VR, APT6011LVFR, APT6011LVR, APT6013B2FLL
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
